TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has developed a trench-type 1 silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistor ...
Developed with highly rugged trench MOSFET technology, the new 30V MXT LV MOSFET ensures a stable power supply for electric power steering SEOUL, South Korea, Dec. 18, 2023 /PRNewswire/ -- Magnachip ...
Although the development of power MOSFETs began with the V-MOS structure, the first commercially successful devices were based on the DMOS structure. In the DMOSFET structure, the MOS channel is ...
DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "Miscellaneous IGBT vs SiC MOSFET comparison: Structure and Cost Analysis" report to their offering. The report provides ...
It is important to first recognize that the Gallium Oxide ecosystem is already quite diverse. We have successfully demonstrated a full toolset for power electronics, including kV-class Schottky ...
An improved SPICE model has been developed by Fairchild engineers for the simulation of trench power devices using the BSIM3 MOSFET model. The new model architecture seeks to eliminate shortcomings in ...
The startup company mqSemi has introduced a Singular Point Source MOS (S-MOS) cell design that is suitable for power MOS based devices. Using Silvaco Victory Process and Device Software, the S-MOS ...
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