In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize ...

During the 2006 Symposium on VLSI Technology being held in Honolulu, Hawaii this week, engineers from R&D organization Sematech shared technical details on metal electrode materials that can be used ...

The technology in an Intel chip that enabled the fabrication of 45 nm microprocessors in 2007. As elements in the chip were being reduced to 45 nanometers, the gate dielectric began to lose its ...

The IC industry is headed toward a new era of scaling–and uncertainty–as chip makers race to develop the key building blocks for the next-generation transistor: high-k dielectrics and metal gates.

Dynamic Random Access Memory (DRAM) serves as the backbone of modern computing, enabling devices ranging from smartphones to high-performance servers. As the demand accelerates for higher density and ...