The double-gate (DG) FET provides a fundamental advantage over conventional single-gate (SG) FETs. In short-channel FETs the drain potential competes with that of the gate to influence the channel.
“We present a CMOS-compatible double gate and label-free C-reactive protein (CRP) sensor, based on silicon on insulator (SOI) silicon nanowires arrays. We exploit a reference subtracted detection ...